Publication date: Apr 29, 2024
Nonfused ring electron acceptors (NFREAs) are interesting n-type near infrared (NIR) photoactive semiconductors with strong molecular absorption and easy synthetic route. However, the low backbone planarity and bulky substitution make NFREA less crystalline, which significantly retards charge transport and the formation of bicontinuous morphology in organic photovoltaic device. Donor and acceptor solubility in different solvents is studied, and the created solubility hysteresis can induce the formation of the highly crystalline donor polymer fibril to purify the NFREA phase, thus a better bicontinuous morphology with improved crystallinity. Based on these results, a general solubility hysteresis sequential condensation (SHSC) thin film fabrication methodology is established to produce highly uniform and smooth photoactive layer. The well-defined interpenetrating network morphology afforded a record efficiency of 19.02%, which is ~22% improvement comparing to conventional device fabrication. A high efficiency retention (Pr) value of 92.3% is achieved in 1 cm² device (17.28% efficiency).
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Table_1.xlsx
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12.4 KiB | Specific performance parameters in different preparation conditions based on organic solar cells in this paper. |
Figure_2c.xlsx
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9.0 KiB | Histogram of PCE measurement for devices in corresponding condition under AM 1.5G, 100 mA cm−2. |
Figure_3b.xlsx
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8.8 KiB | Carrier mobility of the D18:2BTh-2F-C2 in various conditions. |
Supplementary_Figure_2.xlsx
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84.5 KiB | Transmission spectrum evolution. Time-dependent optical transmitance measurement. |
Supplementary_Figure_4.xlsx
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129.6 KiB | Normalized absorption of 2BTh-2F-C2 in various solvents. |
Supplementary_Figure_5.xlsx
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55.6 KiB | In situ thickness variation curve of films. |
Supplementary_Figure_6.xlsx
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35.9 KiB | The film thickness variation before annealing and after annealing for active layers with solid additive of DIB. |
Supplementary_Figure_7.xlsx
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13.8 KiB | TOF-SIMS measurement. |
Supplementary_Figure_8.xlsx
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32.6 KiB | Line cut profiles for D18:2BTh-2F-C2 films without and with DIB. |
Supplementary_Figure_9.xlsx
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8.9 MiB | Waterfall plots of in situ UV–vis absorption spectra for D18:2BTh-2F-C2 blend precursor solution. |
Supplementary_Figure_10.xlsx
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60.0 KiB | Linecut in 520 nm and 790 nm wavelength of in situ UV–vis absorption spectra for D18:2BTh-2F-C2 blend precursor solution. |
Supplementary_Figure_12.xlsx
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18.1 KiB | Device performance optimization for D18:2BTh-2F-C2. |
Supplementary_Figure_13.xlsx
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10.2 KiB | The device performance of 2PACz as HTL compared with PEDOT: PSS. |
Supplementary_Figure_15.xlsx
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12.6 KiB | Relative EQE curves of D18:2BTh-2F-C2 device prepared from OXY and CF&OXY precursor solution compared to CF precursor solution. |
Supplementary_Figure_16.xlsx
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24.9 KiB | UV-vis absorption spectroscopy of pure D18 and 2BTh-2F-C2 film. |
Supplementary_Figure_17.xlsx
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12.6 KiB | VOC and VOC*FF versus JSC for the efficient NFREA-based devices reported in the literature and regression analysis. |
Supplementary_Figure_23.xlsx
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23.3 KiB | Performance based on various NFREAs. |
Supplementary_Figure_24.xlsx
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26.2 KiB | Performance based on various conventional BHJ. |
Supplementary_Figure_25.xlsx
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12.3 KiB | Device performance optimization for PM6:2BTh-2F-C2 for constituent content in binary solvent of CF&OXY. |
Supplementary_Figure_26.xlsx
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23.3 KiB | Performance based on D18 batches. |
Supplementary_Figure_28.xlsx
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222.2 KiB | Representative at indicated delay times of TAS for CF, OXY, CF&OXY based blended film. |
Supplementary_Figure_29.xlsx
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31.7 KiB | SCLC measurement in different conditions of electron-only devices and hole-only devices. |
Supplementary_Figure_30.xlsx
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11.4 KiB | Transient photovoltage and transient photocurrent. |
Supplementary_Figure_31.xlsx
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10.6 KiB | JSC and VOC as a function of light intensity. |
Supplementary_Figure_32.xlsx
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124.1 KiB | FTIR spectra of D18 and 2BTh-2F-C2. |
Supplementary_Figure_33.xlsx
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29.0 KiB | Morphological characterization of acceptor. |
Supplementary_Figure_34.xlsx
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40.3 KiB | Crystal morphology characterization, line cut profiles for D18 and 2BTh-2F-C2 neat films. |
Supplementary_Figure_36.xlsx
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48.0 KiB | Crystal morphology characterization for BHJ. |
Supplementary_Figure_38.xlsx
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51.2 KiB | Linecut of surface profile for CF, OXY, CF&OXY condistion. |
Supplementary_Table_7.xlsx
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19.4 KiB | The device optimization for OXY content in CF&OXY mixed solution for D18:2BTh-2F-C2 under AM 1.5G, 100 mA cm−2. |
Supplementary_Table_8.xlsx
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17.7 KiB | The device optimization for solid additive DIB content under AM 1.5G, 100 mA cm−2. |
Supplementary_Table_24.xlsx
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16.4 KiB | The efficiency for CF, OXY, CF&OXY based devices in area of 5.2 mm2 and 100 mm2 under AM 1.5G, 100 mA cm−2. |
2024.67 (version v2) [This version] | Apr 29, 2024 | DOI10.24435/materialscloud:w6-kf |
2023.135 (version v1) | Aug 31, 2023 | DOI10.24435/materialscloud:nt-y8 |