Ambipolar charge transfer of larger fullerenes enabled by the modulated surface potential of h-BN/Rh(111)

A detailed understanding of how molecules interact with two-dimensional materials, particularly concerning energy level alignment and charge transfer processes, is essential to incorporate functional molecular films into next-generation 2D material-organic hybrid devices. One of the major challenges in integrating molecular films in field-effect transistors is facilitating ambipolar charge transport, which is often hindered by the large electronic gap of the organic layers. In a recent work we compare the adsorption site-dependent energy level alignment of C60, C70, and C84 fullerenes induced by the spatial variation of the electrostatic surface potential of the h-BN/Rh(111) Moiré superstructure. As the size of the fullerenes increases, the HOMO-LUMO gap shrinks. In the case of C84, we find an intrinsic charge transfer from the substrate to the fullerenes adsorbed in the Moiré pore centers, rendering them negatively charged. The electric field effect-induced charging of neutral fullerenes and discharging of intrinsically negatively charged fullerenes are investigated using scanning tunneling spectroscopy, non-contact atomic force microscopy, and Kelvin probe force spectroscopy. Our findings show that on metal-supported h-BN, the LUMO level of C84 is sufficiently close to the Fermi energy that it can be neutral or 1e− negatively charged depending on slight variations of the electrostatic potential. The findings propose a path to make ambipolar charge transfer accessible and efficient by circumventing the need to overcome the fullerenes' electronic gap. This record contain data that support the results discussed in our work.