Published January 8, 2025 | Version v1
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Electric field tunable bandgap in twisted double trilayer graphene

  • 1. Transport at Nanoscale Interfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600, Dübendorf, Switzerland
  • 2. Department of Information Technology and Electrical Engineering, ETH Zurich, 8092, Zurich, Switzerland
  • 3. Quantum Center, ETH Zürich, 8093, Zürich, Switzerland
  • 4. nanotech@surfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600, Dübendorf, Switzerland
  • 5. Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
  • 6. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
  • 7. Department of Physics, University of Basel, 4056, Basel, Switzerland
  • 8. Swiss Nanoscience Institute, University of Basel, 4056, Basel, Switzerland

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Description

Twisted van der Waals heterostructures have recently emerged as a versatile platform for engineering interaction-driven, topological phenomena with a high degree of control and tunability. Since the initial discovery of correlated phases in twisted bilayer graphene, a wide range of moiré materials have emerged with fascinating electronic properties. While the field of twistronics has rapidly evolved and now includes a range of multi-layered systems, moiré systems comprised of double trilayer graphene remain elusive. Here, we report electrical transport measurements combined with tight-binding calculations in twisted double trilayer graphene (TDTLG). We demonstrate that small-angle TDTLG (~1.7−2.0ᵒ) exhibits an intrinsic bandgap at the charge neutrality point. Moreover, by tuning the displacement field, we observe a continuous insulator-semimetal-insulator transition at the CNP, which is also captured by tight-binding calculations. These results establish TDTLG systems as a highly tunable platform for further exploration of magneto-transport and optoelectronic properties.

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References

Journal reference (Paper in which the method is described)
M. Perrin, A. Jayaraj, B. Ghawri, K. Watanabe, T. Taniguchi, D. Passerone, M. Calame, and J. Zhang, npj 2D Materials and Applications 8, 14 (2024), doi: 10.1038/s41699-024-00449-w