Mickael L. Perrin^1,2,3*, Anooja Jayaraj⁴, Bhaskar Ghawri¹, Kenji Watanabe⁵, Takashi Taniguchi⁶, Daniele Passerone⁴, Michel Calame^1,7,8, Jian Zhang¹

1 Transport at Nanoscale Interfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600, Dübendorf, Switzerland

2 Department of Information Technology and Electrical Engineering, ETH Zurich, 8092, Zurich, Switzerland

3 Quantum Center, ETH Zürich, 8093, Zürich, Switzerland

4 nanotech@surfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600, Dübendorf, Switzerland

5 Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan

6 International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan

7 Department of Physics, University of Basel, 4056, Basel, Switzerland

8 Swiss Nanoscience Institute, University of Basel, 4056, Basel, Switzerland

* Corresponding authors emails: mickael.perrin@empa.ch

DOI10.24435/materialscloud:gq-6x [version v1]

Publication date: Jan 08, 2025

How to cite this record

Mickael L. Perrin, Anooja Jayaraj, Bhaskar Ghawri, Kenji Watanabe, Takashi Taniguchi, Daniele Passerone, Michel Calame, Jian Zhang, Electric field tunable bandgap in twisted double trilayer graphene, Materials Cloud Archive 2025.4 (2025), https://doi.org/10.24435/materialscloud:gq-6x

Description

Twisted van der Waals heterostructures have recently emerged as a versatile platform for engineering interaction-driven, topological phenomena with a high degree of control and tunability. Since the initial discovery of correlated phases in twisted bilayer graphene, a wide range of moiré materials have emerged with fascinating electronic properties. While the field of twistronics has rapidly evolved and now includes a range of multi-layered systems, moiré systems comprised of double trilayer graphene remain elusive. Here, we report electrical transport measurements combined with tight-binding calculations in twisted double trilayer graphene (TDTLG). We demonstrate that small-angle TDTLG (~1.7−2.0ᵒ) exhibits an intrinsic bandgap at the charge neutrality point. Moreover, by tuning the displacement field, we observe a continuous insulator-semimetal-insulator transition at the CNP, which is also captured by tight-binding calculations. These results establish TDTLG systems as a highly tunable platform for further exploration of magneto-transport and optoelectronic properties.

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Keywords

Twisted multilayer graphene Tight-binding WannierTools 2D materials Experimental MARVEL