materialscloud:2020.130
Published October 23, 2020 | Version v1
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2‐D materials for ultrascaled field-effect transistors: one hundred candidates under the ab initio microscope

Creators

  • 1. Integrated System Laboratory, ETH Zurich, CH-8092 Zurich, Switzerland
  • 2. Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

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Description

Due to their remarkable properties, single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal dichalcogenides, are still far from delivering the expected performance. Based on a recent theoretical study that predicts the existence of more than 1800 exfoliable 2-D materials, we investigate here the 100 most promising contenders for logic applications.

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References

Journal reference
C. Klinker, A. Szabo, C. Stieger, D. Campi, N. Marzari, M. Luisier, ACS Nano 14, 8605–8615 (2020), doi: 10.1021/acsnano.0c02983

Preprint
C. Klinker, A. Szabo, C. Stieger, D. Campi, N. Marzari, M. Luisier, arXiv:2004.04434 (2020)