materialscloud:2021.215
Published December 8, 2021 | Version v1
Dataset Open

Influence of the hBN dielectric layers on the quantum transport properties of MoS2 transistors.

Creators

  • 1. Integrated System Laboratory, ETH Zurich, Switzerland

* Contact person

Description

An ab initio study of the coupled electrons and phonon transport properties of MoS2-hBN devices. A comparison of the device characteristics when hBN is treated as a perfectly insulating, non vibrating layer and one where it is included in the DFT together with MoS2.

Files

File preview

files_description.md

All files

Files (37.8 MiB)

Name Size
md5:3a42493764d15a500643b7b875876aa1
207 Bytes Preview Download
md5:d0df72b89e8eab874325fae35c83e7b2
37.8 MiB Preview Download

References

Journal reference
S. Fiore, C. Klinkert, F. Ducry, J. Backman, and M. Luisier, Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS2 Transistors, Materials 15, 1062 (2022)., doi: 10.3390/ma15031062