Fatima Ezzahra Ihfa^1*, Leila Nouri^1*, Youssef Ait Oubella^1*, Youness Ben Said¹, Zoubida Sakhi¹, Awatif Dezairi¹, Mohamed Bennai^1*

1 Faculty of Science Ben M'Sik, Hassan II University, Casablanca, Morocco

* Corresponding authors emails: Fatima.z.ihfa@gmail.com, nourileila1@yahoo.fr, pr.physique.1017@gmail.com, mdbennai@yahoo.fr

DOI10.24435/materialscloud:77-h8 [version v1]

Publication date: May 11, 2023

How to cite this record

Fatima Ezzahra Ihfa, Leila Nouri, Youssef Ait Oubella, Youness Ben Said, Zoubida Sakhi, Awatif Dezairi, Mohamed Bennai, Characteristics data for a new parameters extraction method of InGaP/GaAs/Ge multi-junction solar cell, Materials Cloud Archive 2023.74 (2023), https://doi.org/10.24435/materialscloud:77-h8

Description

This data presents the characteristics obtained using extracted parameters of multi- junction solar cells using a single diode triple-junction model. The proposed method combines analytical and numerical techniques to solve a nonlinear equation and determine the parameters, including the ideality factor, series resistance, shunt resistance, photocurrent, and saturation current, using manufacturer data and mathematical equations. The results show that the suggested approach achieves satisfactory performance and provide an accurate representation of the multi-junction circuit’s parameters. Overall, this study provides a valuable contribution to the field of solar cell parameter extraction and offers insights for further research in this area.

Materials Cloud sections using this data

Files

File name	Size	Description
G=200.data MD5md5:09a242b04063ae18ecfd34b5ad855286	8.8 KiB	The P-V curves data simulated at 200 irradiation and temperature at 25°C.
G=400.data MD5md5:09a242b04063ae18ecfd34b5ad855286	8.8 KiB	The P-V curves data simulated at 400 irradiation and temperature at 25°C.
G=600.data MD5md5:66ae8459888e40d8560022a686c489d0	8.9 KiB	The P-V curves data simulated at 600 irradiation and temperature at 25°C.
G=800.data MD5md5:7e1899ce4496e8cfca0b0a970480b333	9.0 KiB	The P-V curves data simulated at 800 irradiation and temperature at 25°C.
G=1000.data MD5md5:cb1616823396481bbb68c67cb842ecaa	9.0 KiB	The P-V curves data simulated at 1000 irradiation and temperature at 25°C.
IV_G=200.data MD5md5:d31e1b5628695e3739dfe130de7e2666	8.8 KiB	The I-V curves data simulated at 200 irradiation and temperature at 25°C.
IV_G=400.data MD5md5:d31e1b5628695e3739dfe130de7e2666	8.8 KiB	The I-V curves data simulated at 400 irradiation and temperature at 25°C.
IV_G=600.data MD5md5:f1b56577b8b96a6bacb4cb64fa4d4a6e	8.9 KiB	The I-V curves data simulated at 600 irradiation and temperature at 25°C.
IV_G=800.data MD5md5:e90b4a1cf6988c813dd1a45d97105b32	9.0 KiB	The I-V curves data simulated at 800 irradiation and temperature at 25°C.
IV_G=1000.data MD5md5:77aae477c544bb77455dc9d812143d62	9.0 KiB	The I-V curves data simulated at 1000 irradiation and temperature at 25°C.
InGaP_IV.data MD5md5:2710893b79e1b37817da5480244399aa	4.8 KiB	The I-V simulated curve data of the sub-cell InGaP at irradiation at 1000 and temperature at 25°C.
GaAS_IV.data MD5md5:6b39d14f38683cd2eb8e490213aff395	3.5 KiB	The I-V simulated curve data of the sub-cell GaAs at irradiation at 1000 and temperature at 25°C.
Ge_IV.data MD5md5:d4240c86b7086e993f86840f59de2136	782 Bytes	The I-V simulated curve data of the sub-cell Ge at irradiation at 1000 and temperature at 25°C.
MJ_IV.data MD5md5:7bf7bdbbf9441fe53b496fc40a380c4e	9.0 KiB	The I-V simulated curve data of the triple junction solar cell InGaP/GaAs/Ge at irradiation at 1000 and temperature at 25°C.
InGaP_PV.data MD5md5:2d6ff03d40a9f50107716b77954ba804	782 Bytes	The P-V simulated curve data of the sub-cell InGaP at irradiation at 1000 and temperature at 25°C.
GaASPV.data MD5md5:7431d510a71f2112fd965940b4876d6f	3.5 KiB	The P-V simulated curve data of the sub-cell GaAs at irradiation at 1000 and temperature at 25°C.
Ge_PV.data MD5md5:0626385c6c59c2aa77533098fdb3886b	9.0 KiB	The P-V simulated curve data of the sub-cell Ge at irradiation at 1000 and temperature at 25°C.
MJ_PV.data MD5md5:f8c69a0871c8949e3da0919ed1ab280f	4.8 KiB	The P-V simulated curve data of the triple junction solar cell InGaP/GaAs/Ge at irradiation at 1000 and temperature at 25°C.
ReadMe.rtf MD5md5:fb0af10884e2f5d94638006302399c95	2.1 KiB	readme file

License

Files and data are licensed under the terms of the following license: Creative Commons Attribution 4.0 International.
Metadata, except for email addresses, are licensed under the Creative Commons Attribution Share-Alike 4.0 International license.

External references

Keywords

Solar Energy Multi-junction PV Parameter extraction I-V characteristics