Electron transport through metal/MoS2 interfaces: edge- or area-dependent process?

Mathieu Luisier1*, Aron Szabo1, Achint Jain2, Markus Parzefall2, Lukas Novotny2

1 Integrated Systems Laboratory, ETH Zürich, 8092 Zürich, Switzerland

2 Photonics Laboratory, ETH Zürich, 8093 Zürich, Switzerland

* Corresponding authors emails:
DOI10.24435/materialscloud:2019.0060/v1 [version v1]

Publication date: Oct 14, 2019

How to cite this record

Mathieu Luisier, Aron Szabo, Achint Jain, Markus Parzefall, Lukas Novotny, Electron transport through metal/MoS2 interfaces: edge- or area-dependent process?, Materials Cloud Archive 2019.0060/v1 (2019), doi: 10.24435/materialscloud:2019.0060/v1.


In ultra-thin two-dimensional (2-D) materials, the formation of ohmic contacts with top metallic layers is a challenging task that involves different processes than in bulk-like structures. Besides the Schottky barrier height, the transfer length of electrons between metals and 2-D monolayers is a highly relevant parameter. For MoS2, both short (≤30 nm) and long (≥0.5 μm) values have been reported, corresponding to either an abrupt carrier injection at the contact edge or a more gradual transfer of electrons over a large contact area. Here we use ab initio quantum transport simulations to demonstrate that the presence of an oxide layer between a metallic contact and a MoS2 monolayer, for example TiO2 in case of titanium electrodes, favors an area-dependent process with a long transfer length, while a perfectly clean metal-semiconductor interface would lead to an edge process. These findings reconcile several theories that have been postulated about the physics of metal/MoS2 interfaces and provide a framework to design future devices with lower contact resistances.

Materials Cloud sections using this data

No Explore or Discover sections associated with this archive record.


File name Size Description
193 Bytes README File
18.2 GiB Data File


Files and data are licensed under the terms of the following license: Creative Commons Attribution 4.0 International.

External references

Journal reference
A. Szabo, A. Jain, M. Parzefall, L. Novotny, and M. Luisier, Nano Letters 19, 3641-3647 (2019) doi:10.1021/acs.nanolett.9b00678


MARVEL/DD3 2-D materials Metal-semiconductor interfaces Contact physics Transfer length Fermi level pinning Ab initio device simulations

Version history:

2019.0060/v1 (version v1) [This version] Oct 14, 2019 DOI10.24435/materialscloud:2019.0060/v1